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Home Technology High Voltage E-Mode GaN 650V Gen2 Platform with DFN5*6 DFN8*8
General description
INN100W032A1 INN100W032A

INN100W032A1

 
GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) based on advanced high voltage GaN Technology.

Features include GaN-on-Silicon E-mode HEMT technology， Zero reverse recovery loss，Very low gate charge ，High Switching Frequency application，Ultra-low FOM

INN100W032A

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCSP with 3.5 mm x 2.13 mm package size.

Features
Applications

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