General description

INN100W032A

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCSP with 3.5 mm x 2.13 mm package size.

INN100W12

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in Flip chip WLCSP with 2.51mm x 1.51mm package size.

Features
Applications

High frequency DC-DC converter

Point of Load Converters

BLDC Motor driver

Class D Audio

Lidar

E-Mobility

Wireless Charger

Lidar Application

Pulsed Power Application

Class-D Audio

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