General description

INN150LA070A

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in Flip chip LGA (FCLGA) with 3.2 mm x 2.2 mm package size.

Features
Applications

Synchronous rectification

Class-D audio

High frequency DC-DC converter

Uninterruptible power supply

Communication base station

Motor driver

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