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  • Adapters

    Power Delivery (PD) chargers or adapter refers to small portable electronic power supply equipment.  It mainly converts AC input coming from the grid into (low voltage) DC output, and supplies power to small electronic products such as mobile phones, tablets, LCD monitors and notebook computers.

    Innoscience’s GaN technology enables adapters that are more powerful, much smaller and more efficient  than the one made with traditional Silicon technology.

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    Description

    Today, our mobile phone are getting more and more powerful and there is a need to charge them faster and faster. Therefore, the power delivery (PD) chargers technology is evolving towards higher efficiency and higher power density, which allows adapters to be more powerful, and thus charge our phone faster, without increasing their size and wasting energy as heat. In order to achieve such objective, the adapter system needs to be more efficient and needs to operate at higher frequency that allow to use smaller passive components. The high frequency and high efficiency characteristics of Innoscience’s GaN technology meet these requirements enabling efficient and compact adapters. Several adapters (in-box and out-box) are already successfully using Innoscience’s GaN technology and sold in the consumer market.

    Compared with traditional Si MOSFET, GaN has the following advantages:
    1 Low Qg/Ciss: faster turn-on and turn-off, higher switching speed, reduce switching losses.
    2 Low Coss/Qoss: faster turn-on and turn-off and higher switching frequency, reduce switching losses.
    3 Qrr=0: No reverse recovery losses (absence of body diode), Reduce switching noise, better EMI performance.
    4 Low RDSON: reduce conduction losses.

    Solution topology view
    Main parameters of the scheme
    Scheme 1：SMPS——33W QR Flyback 
    Topology QR Flyback
    Input voltage 90-264Vac
    Output 3.3V~20V，11V/3A(max)
    Frequency 120KHz@230Vac
    Transformer ATQ1715，JPP95
    Efficiency 92.9% @230Vac & 20V/1.5A
    Size 26*26*26mm（PCBA）
    Watt density 30.8W/in3
    Device INN650DA04
    Control IC JW1515H+JW7726B
       
    Scheme 2：SMPS——65W QR Flyback 
    Topology QR flyback
    Input voltage 90-264Vac
    Output 20V/3.25A
    Frequency 135kHz @230Vac
    Transformer ATQ23.7，JPP95
    Efficiency 94.1% @230Vac & 20V/3.25A
    Size 48.7*27*26mm（PCBA）
    Watt density 31W/in3（PCBA）
    Device INN650DA260A
    Control IC NCP1342+MP6908A
       
    Scheme 3：SMPS——120W PFC+ACF 
    Topology Boost PFC+ACF
    Input voltage 90-264Vac
    Output 120W max
    ACF Frequency 230kHz @120W
    Transformer ATQ23，NVM02
    Efficiency 94.5% @230Vac & 20V/6A
    Size 46*46*26mm（PCBA）
    Watt density 35.7W/in3（PCBA）
    Device INN650D150A+INN650D260A*2
    Control IC NCP1622+JW1550

  • Wireless Charging

    Wireless charging refers to the magnetic field transfer of energy between the charger and the electric equipment, which can then be charged without the need of using wires.

    There are two types of wireless charging technologies: electromagnetic induction and coupled resonance. 

    Today, wireless charging technology is widely used in mobile phones, smart homes, electric car charging and other scenarios but their full potential is not yet fully exploited due to technology limitation.

    Innoscience’s GaN technology enables more powerful and efficient wireless charging systems thus unlocking the real potential of wireless charging technology and users to finally get rid of wires.

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    Wireless Charging

    Compared to traditional Silicon technology, Innoscience’s GaN technology has the advantages of smaller parasitic capacitance, faster switching speed and smaller on-resistance per unit area. When applied to wireless charging system, Innoscience’s GaN technology reduces both the switching and conduction loss, thus enabling wireless charging system with higher system efficiency and longer transmission distance.

    Solution topology view

  • Class-D Audio Amplifier

    Class-D amplifiers based on Innoscience’s GaN technology enables audio systems that are smaller and provide a much higher sound quality to the user compared with what is possible with traditional technology. 

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    Class-D Audio Amplifier

    The power loss of Class-D amplifier is much smaller than classical linear amplifier thanks to the fact that the Class-D amplifier operates in switching mode. This bring several benefits, which are among others: better sound quality, less heat, higher efficiency, smaller circuit board and thus smaller audio system, lower cost, extending battery life in portable systems etc… InnoGaNTM transistors area ideal for class-D amplifier by combining fast switching speed, low switching loss, small parasitic capacitance etc..

    The power transistor in Class-D amplifier operates in switching mode and generate a train of voltage pulses output. Thus, a low-pass filter is often inserted between the output stage and the speaker. Since most audio signals are not pulse trains, a modulator must be included in a Class-D amplifier to convert the audio input into pulses, so the pulses can drive the power transistor to operate. Since the Class-D amplifier operate in switching mode, the switching loss of the transistors become key for the system performance, which is why GaN technology is often used in Class-D amplifier for audio system. Compared to traditional Silicon transistors, InnoGaNTM transistors show: faster switching speed, lower switching loss, smaller parasitic capacitance (Coss) lower energy stored in output capacitance (Eoss), No reverse recovery losses (Qrr=0 thanks to the absence of the body diode). Moreover, lower switching loss enables to increase the pulse width modulation (PWM) frequency, which allow to reduce the size (and loss) of the low-pass filters. Furthermore, since Innoscience’s GaN (InnoGaNTM) devices switch fast, it is recommend to reduce the dead time of the PWM.

    Solution topology view

  • Over Voltage Protection (OVP)

    The Over Voltage Protection (OVP) unit function is to protect the main system by shutting down the unit

    when the input voltage exceeds a defined value.

    Nowadays, the USB type C port  is used not only for charging but on-the-go (OTG) or in reverse TX Mode.  Consequently and since the charging power of mobile phones are getting higher and higher, the battery protection circuits are nowadays indispensable. 

    Innoscience’s GaN technology enables efficient OVP systems and also the replacement of 2 Silicon MOSFETs with 1 GaN transistor. This saves on the overall OVP costs and makes the OVP unit smaller, which is very important considering the space constraints on mobile phone’s circuit boards.

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    Over Voltage Protection (OVP)

    The Over Voltage Protection (OVP) unit function is to protect the main system by shutting down the unit when the input voltage exceeds a defined value. The size of each unit inside a mobile phone or laptop is of paramount importance and InnoGaNTM transistors enable the OVP unit to be 50% smaller than the one made with Silicon technology. This is achieved by replacing two MOSFET devices with one InnoGaNTM bi-directional transistor. Indeed, thanks to the absence of the body diode, InnoGaNTM realizes the bidirectional shutdown on its own. At the same time, the overall system losses are reduced thanks to the lower on-resistance of InnoGaNTM devices compared to Silicon MOSFET. This increases the charging efficiency and produce less heat.

    Solution topology view
    Main parameters of the scheme
    Bi-GaN  
    Part Number INN40W08
    Configuration Single
    VDD(Max)/V 40
    ID( continous current , max)/A 15
    RDD(on)(type)/mOhm 5.5
    Package(mm) 2X2

  • Time of Flight (ToF)

    Time of Flight (ToF) is a method to measure distance and map 3D space accurately by measuring the time that is needed for an optical signal, which is generated by a laser, to be reflected back to the system source.

    Some of Light Detection and Ranging (LIDAR) system are based on ToF methods and there are used in the latest generations of mobile phone (flash LIDAR), they are key for AR/VR devices as well as they are used in surveillance and automotive for safety sensor as well as for self driving experience (often scanning LIDAR).

    Innoscience’s GaN technology is used today as driver for the lasers inside LIDAR systems. By providing shorter and faster pulses, Innoscience’s GaN technology enables LIDAR systems that have higher resolution and longer range with respect to what is possible with traditional Silicon technology.

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    Time-of-flight (ToF)

    The resolution and measure distance in LIDAR systems based on Time-of-flight (ToF) is determined by the laser driver of the system. InnoGaNTM transistors are today used in ToF applications to drive the laser as they provide simultaneously higher current (i.e. longer measure distance) and narrower pulse width (i.e. higher resolution) compared to traditional Silicon technology. Therefore, Innoscience’s GaN Technology with smaller area cost and higher performance is a better choice for ToF system.

    Solution topology view
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